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MJD127T4G-JSM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD127T4G-JSM product

MJD127T4G-JSM

Transistors - Bipolar (BJT) - Single Pre-Biased

PNPDarlingtonPower TransistorDPAK

The MJD127T4G-JSM is a PNP Darlington power transistor in a DPAK package, suitable for general-purpose amplification and low-speed switching.

Best for

  • General purpose amplification
  • Low-speed switching

Avoid if

  • High-frequency switching applications

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
-100 V
IC
-8 A
hFE
1000 - 12000
Package
DPAK

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AmplifierSwitching

Datasheet

51cb605e908cefd64fdc33ea32c271a5_2403011758_JSMSEMI-MJD127T4G-JSM_C20606863.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD127T4G-JSM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon PNP Darlington power transistor designed for general-purpose amplifier and low-speed switching applications.