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MJD127T4G(MS) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD127T4G(MS) product

MJD127T4G(MS)

Transistors - Bipolar (BJT) - Single

PNPDarlingtonTO-252

The MJD127T4G(MS) is a PNP Darlington transistor with an integrated damper diode, suitable for power switching applications requiring high gain.

Best for

  • Power switching
  • General purpose amplification

Avoid if

  • Applications requiring extremely low saturation voltage

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
-100 V
IC
-8 A
hFE
1000 - 12000

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Switching

Datasheet

8f35117c1f7dae5b30ebfca28dd53244_2404151058_MSKSEMI-MJD127T4G-MS_C22365382.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD127T4G(MS): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP Darlington transistor featuring high DC current gain and a built-in damper diode between the emitter and collector.