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MJD31CQ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD31CQ product

MJD31CQ

Bipolar (BJT)

NPN100 V3 ATO-252AEC-Q101Power BJT

MJD31CQ is a 100 V, 3 A NPN power transistor in TO-252 for low-speed switching and general-purpose amplification. Its Q suffix denotes AEC-Q101 qualification.

Best for

  • Low-speed switching stages
  • General-purpose power amplification
  • AEC-Q101 automotive-qualified designs

Avoid if

  • High-frequency switching requiring low storage time
  • Applications with insufficient base-drive current
  • Designs needing low saturation voltage at 3 A

Check before use

  • Base current needed for the intended collector current
  • Thermal resistance of the implemented PCB and copper area
  • Collector-tab electrical connection and footprint
  • Voltage transient margin below 100 V

Key specifications

Collector-emitter voltage
100 V
Continuous collector current
3 A
Package
TO-252
Qualification
AEC-Q101

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
MSL 1
ECCN
-
HTSUS
-

Application

Low-speed switchingGeneral-purpose amplifiersAutomotive electronics

Datasheet

e50e1ac90a72b78e1f716a2e16f04902_MJD31CQ.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD31CQ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

MJD31CQ is a Yangjie NPN power bipolar transistor supplied in a TO-252 surface-mount package. It is rated for 100 V collector-emitter voltage and 3 A continuous collector current.