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MJD31T4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD31T4G product

MJD31T4G

Transistors - Bipolar (BJT) - Single

NPNPower TransistorDPAKonsemi

The MJD31T4G is a 40V, 3A NPN power transistor in a DPAK surface mount package, suitable for general-purpose amplification and low-speed switching.

Best for

  • General purpose amplification
  • Low speed switching

Avoid if

  • High frequency switching applications
  • Applications requiring higher than 40V VCEO

Check before use

  • Thermal management requirements
  • Peak current handling

Key specifications

Polarity
NPN
VCEO
40 V
IC
3 A
PD
15 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

General PurposePower Switching

Datasheet

MJD31-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD31T4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MJD31T4G is an NPN silicon power transistor manufactured by onsemi, designed for general-purpose amplifier and low-speed switching applications.