ProjectsPricingInsights

MJD32C-13 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD32C-13 product

MJD32C-13

Transistors - Bipolar (BJT) - Single

PNPBJT100V3ATO-252

The MJD32C-13 is a 100V, 3A PNP power transistor in a TO-252 package, suitable for high-reliability power switching and amplification.

Best for

  • Power switching
  • Amplification

Avoid if

  • Applications requiring NPN polarity
  • Extremely space-constrained designs without thermal dissipation capability

Check before use

  • Thermal design
  • Creepage and clearance distances

Key specifications

VCEO
-100 V
IC
-3 A
Package
TO-252 (DPAK)

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541210095.0

Application

Power SwitchingAmplification

Datasheet

DSA1008000-17.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD32C-13: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage PNP bipolar junction transistor (BJT) designed for power switching and amplification.