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MJD42CT4G(MS) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD42CT4G(MS) product

MJD42CT4G(MS)

Transistors - Bipolar (BJT) - Single

PNPBJTTO-252Amplifier

The MJD42CT4G(MS) is a PNP power transistor suitable for general-purpose amplification and low-speed switching tasks.

Best for

  • General purpose amplification
  • Low-speed switching

Avoid if

  • High-frequency switching applications
  • Applications requiring >1.25W dissipation without external heatsinking

Check before use

  • Thermal design
  • Polarity requirements

Key specifications

VCEO
-100 V
IC
-6 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Switching

Datasheet

f0913bddc47d94e51c9ec25be6ebf49a_2404151058_MSKSEMI-MJD42CT4G-MS_C22365378.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD42CT4G(MS): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) manufactured by MSKSEMI, designed for general-purpose amplification and low-speed switching.