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MJE350G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJE350G product

MJE350G

Transistors - Bipolar (BJT) - Single

PNPHigh VoltageTO-126

The MJE350G is a high-voltage PNP power transistor in a TO-126 package, suitable for general-purpose and transformer applications.

Best for

  • High voltage general purpose applications
  • Transformer circuits

Avoid if

  • Applications requiring currents exceeding -500mA
  • Space-constrained designs where TO-126 is too large

Check before use

  • Thermal management requirements
  • Complementary NPN MJE340 availability

Key specifications

Polarity
PNP
VCEO
-300 V
IC
-500 mA
Power Dissipation
20 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

PowerGeneral Purpose

Datasheet

MJE350-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJE350G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MJE350G is a PNP epitaxial silicon transistor designed for high-voltage applications, featuring a -300V collector-emitter breakdown voltage.