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MJE5731G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJE5731G product

MJE5731G

Transistors - Bipolar (BJT) - Single

PNPPower TransistorHigh Voltage

The MJE5731G is a 350V, 1A PNP power transistor in a TO-220 package, suitable for high-voltage switching and audio applications.

Best for

  • Audio output amplifiers
  • Switch-mode power supplies

Avoid if

  • Low-voltage applications where a lower VCEO device would be more efficient

Check before use

  • Thermal dissipation requirements and safe operating area (SOA) limits

Key specifications

VCEO
350 V
IC
1 A
PD
40 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

PowerIndustrial

Datasheet

MJE5730-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJE5731G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MJE5731G is a high-voltage PNP silicon power transistor designed for line-operated audio output amplifiers and switch-mode power supply drivers.