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MMBF170-F-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBF170-F-HXY product

MMBF170-F-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2360V

The MMBF170-F is a 60V, 0.3A N-Channel MOSFET in a SOT-23 package, optimized for low-power switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-current power conversion
  • Applications requiring low RDS(on) below 1Ω

Check before use

  • Thermal management in high-density designs

Key specifications

VDS
60 V
ID
0.3 A
RDS(on)
< 2 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementLoad Switching

Datasheet

1d2b2cc29cef842e3303536e00a45ad7_2403261741_HXY-MOSFET-MMBF170-F-HXY_C22367167.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBF170-F-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using trench technology, designed for efficient switching in small-signal applications.