ProjectsPricingInsights

MMBT1015G-GR-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT1015G-GR-AE3-R product

MMBT1015G-GR-AE3-R

Discrete Semiconductor Products

PNPTransistorSOT-23Amplifier

The MMBT1015G-GR-AE3-R is a general-purpose PNP silicon transistor optimized for low-frequency amplification, featuring a -50V breakdown voltage and 150mA collector current in a compact SOT-23 package.

Best for

  • Low-frequency signal amplification
  • General-purpose switching

Avoid if

  • High-frequency RF applications
  • High-power switching exceeding 150mA

Check before use

  • Pin configuration
  • Thermal dissipation limits

Key specifications

Transistor Type
PNP
VCEO
-50V
IC
-150mA
hFE Rank
GR (200-400)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposeConsumer Electronics

Datasheet

4750fa47ca2c325ef84111f472d4b424_1808280054_UTC-Unisonic-Tech-MMBT1015G-GR-AE3-R_C171478.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT1015G-GR-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon transistor designed for low-frequency amplifier applications, manufactured by UTC.