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MMBT5401 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5401 product

MMBT5401

Transistors - Bipolar (BJT) - Single

PNPHigh VoltageAmplifierSOT-23

The MMBT5401 is a high-voltage PNP silicon epitaxial planar transistor designed for amplifier applications in a compact TO-236 (SOT-23) surface-mount package.

Best for

  • High voltage amplification
  • General purpose switching

Avoid if

  • Applications requiring >600mA collector current
  • High-power dissipation circuits exceeding 350mW

Check before use

  • Thermal derating curve at high ambient temperatures

Key specifications

VCEO
150 V
IC
600 mA
hFE
60 - 240

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High Voltage Amplifier

Datasheet

89524a835ca3781a2e3f6773b3bedac1_1912111437_Yangzhou-Yangjie-Elec-Tech-MMBT5401_C405310.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5401: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) optimized for high-voltage amplifier circuits.