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MMBT5401DW AI Analysis:
Specs, Applications & Alternatives

AI summary

MMBT5401DW product

MMBT5401DW

Bipolar (BJT)

PNPTransistorSOT-363Amplifier

The MMBT5401DW is a PNP silicon epitaxial planar transistor housed in an ultra-small SOT-363 surface-mount package, optimized for medium-power amplification and switching tasks.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • High-power applications exceeding 300mW
  • Applications requiring high-speed switching beyond 100MHz

Check before use

  • Thermal dissipation requirements
  • Package footprint compatibility

Key specifications

VCEO
-160 V
IC
-600 mA
Power Dissipation
300 mW

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AmplificationSwitching

Datasheet

10b8bed0950fa5effedfa6b420df7531_2302091130_Shikues-MMBT5401DW_C5344623.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon epitaxial planar transistor designed for medium-power amplification and switching applications, packaged in a compact SOT-363 surface-mount format.