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MMBT5550LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5550LT1G product

MMBT5550LT1G

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23

The MMBT5550LT1G is a high-voltage NPN transistor in a SOT-23 package, suitable for general-purpose switching and amplification in high-voltage circuits.

Best for

  • High-voltage switching
  • Signal amplification

Avoid if

  • Applications requiring >600mA current
  • High-power dissipation circuits exceeding 225mW

Check before use

  • Thermal management
  • Voltage transients

Key specifications

VCEO
140 V
IC
600 mA
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

Power ManagementIndustrial

Datasheet

MMBT5550LT1-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5550LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN silicon transistor manufactured by onsemi, designed for surface-mount applications in a SOT-23 package.