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MMBT5551-7-F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551-7-F product

MMBT5551-7-F

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT23

The MMBT5551-7-F is a high-voltage NPN transistor in an SOT23 package, suitable for low-power switching and amplification tasks requiring up to 160V.

Best for

  • Low-power switching
  • High-voltage amplification

Avoid if

  • Applications requiring >600mA current
  • High-power dissipation circuits exceeding 300mW

Check before use

  • Thermal management
  • Voltage transients

Key specifications

VCEO
160 V
IC
600 mA
Package
SOT23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541210075.0

Application

General

Datasheet

Diodes-Inc.-MMBT5551-7-F.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551-7-F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated, commonly used for low-power amplification and switching.