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MMBT5551-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551-B product

MMBT5551-B

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23

The MMBT5551-B is a high-voltage NPN transistor in a SOT-23 package, ideal for general-purpose high-voltage amplification.

Best for

  • High voltage amplification
  • General purpose switching

Avoid if

  • Applications requiring low-voltage operation or high-current power switching

Check before use

  • Thermal dissipation limits in SOT-23 package

Key specifications

VCEO
160 V
IC
600 mA
hFE
100-300

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High Voltage Amplifier

Datasheet

854a0154a1f8b8183bf1512a5b5faf57_1810181650_Foshan-Blue-Rocket-Elec-MMBT5551-B_C305444.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN transistor in a SOT-23 package, specifically classified with an hFE range of 100-300.