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MMBT5551 G1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551 G1 product

MMBT5551 G1

Bipolar (BJT)

NPNHigh VoltageSOT-23

The MMBT5551 is a high-voltage NPN transistor in a SOT-23 package, suitable for medium power amplification and switching.

Best for

  • High-voltage switching
  • Medium power amplification

Avoid if

  • Low-voltage logic circuits where lower VCEsat is preferred

Check before use

  • Thermal management in SOT-23 package

Key specifications

VCEO
160 V
IC
600 mA
hFE
100-300

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower

Datasheet

da7d53980f57ed1c2cbc282736aece57_JUXING(钜兴)&MMBT5551 G1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551 G1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551 is a general-purpose NPN bipolar junction transistor (BJT) designed for high-voltage applications.