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MMBT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551 product

MMBT5551

Discrete Semiconductor Products

NPNTransistorSOT-23High Voltage

The MMBT5551-H is a high-voltage NPN transistor in an SOT-23 package, optimized for medium power amplification and switching.

Best for

  • Medium power switching
  • Signal amplification

Avoid if

  • High-frequency applications exceeding 100MHz
  • Power dissipation requirements above 300mW

Check before use

  • Thermal management in high-density layouts

Key specifications

VCEO
160 V
IC
600 mA
hFE
200-300

Compliance & Environment

RoHS
RoHS

Application

General SwitchingPower Amplification

Datasheet

1809251417_-DIOTEC-MMBT5551_C212797.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551-H is a high-voltage NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications.