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MMBT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551 product

MMBT5551

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23

The MMBT5551 is a high-voltage NPN transistor in a SOT-23 package, ideal for general-purpose high-voltage amplification.

Best for

  • High-voltage amplification
  • General-purpose switching

Avoid if

  • Applications requiring high power dissipation beyond 300mW

Check before use

  • Verify the hFE range (50-150, 100-300, or 200-400) based on the marking code

Key specifications

VCEO
160 V
IC
600 mA
hFE
50 - 400

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposeHigh Voltage Amplifier

Datasheet

5f9417ba9c36d065b94fa87893218d5f_2203092030_Shenzhen-Jinkaisheng-Elec-MMBT5551_C2972766.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551 is a silicon NPN bipolar junction transistor (BJT) designed for high-voltage applications, packaged in a surface-mount SOT-23 format.