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MMBT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551 product

MMBT5551

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23BJT

The MMBT5551 is a high-voltage NPN transistor in an SOT-23 package, ideal for medium-power switching and amplification.

Best for

  • High-voltage switching
  • Medium-power amplification

Avoid if

  • Applications requiring very high current (>600mA) or low-voltage logic levels where a standard small-signal transistor suffices.

Check before use

  • Thermal dissipation limits
  • hFE classification (L: 100-200, H: 200-300)

Key specifications

VCEO
160 V
IC
600 mA
hFE
80-300

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Switching

Datasheet

5f9417ba9c36d065b94fa87893218d5f_2203092030_Shenzhen-Jinkaisheng-Elec-MMBT5551_C2972766.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551 is a medium-power NPN bipolar junction transistor (BJT) designed for high-voltage applications, commonly used in switching and amplification circuits.