ProjectsPricingInsights

MMBT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551 product

MMBT5551

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-23High Voltage

The MMBT5551 is a high-voltage NPN bipolar junction transistor (BJT) in a SOT-23 package, suitable for general-purpose switching and amplification.

Best for

  • High-voltage switching
  • Signal amplification

Avoid if

  • Extremely high-frequency RF applications
  • High-power circuits exceeding 350mW

Check before use

  • Thermal limits
  • Gain linearity

Key specifications

VCEO
160 V
IC
600 mA
hFE
80-250

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

5f9417ba9c36d065b94fa87893218d5f_2203092030_Shenzhen-Jinkaisheng-Elec-MMBT5551_C2972766.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon epitaxial NPN transistor designed for high-voltage switching and amplifier applications.