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MMBT5551_R1_00001 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551_R1_00001 product

MMBT5551_R1_00001

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23

The MMBT5551 is a high-voltage NPN transistor in a SOT-23 package, suitable for general-purpose switching and amplification in high-voltage circuits.

Best for

  • High-voltage switching
  • Signal amplification

Avoid if

  • Applications requiring power dissipation significantly above 250mW

Check before use

  • Thermal management on PCB

Key specifications

VCEO
160 V
IC
600 mA
PD
250 mW

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Purpose

Datasheet

017e66d3c65cc009541637fad3e2f54c.pdf

800 KB

Datasheet AI

CAD Models

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551 is a high-voltage NPN silicon planar transistor designed for applications requiring high collector-emitter voltage handling.