MMBT5551_R1_00101 Datasheet, Specs, Alternatives & ECAD | PANJIT International Inc. | PartGenie

AI summary

MMBT5551_R1_00101 product

The MMBT5551 is a high-voltage NPN bipolar junction transistor (BJT) housed in a compact SOT-23 surface-mount package.

Best for

High voltage switching
General purpose amplification

Avoid if

Applications requiring power dissipation significantly above 250mW

Check before use

Thermal derating requirements

Key specifications

VCEO: 160 V
IC: 600 mA
PD: 250 mW
Package: SOT-23

Compliance & Environment

RoHS: RoHS Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

General Purpose

Datasheet

54627e33f53e2fc1df7719f90e09c026_2205091530_PANJIT-International-MMBT5551-R1-00101_C3001254.pdf

800 KB

CAD Models

Download ECAD models for MMBT5551_R1_00101: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551 is an NPN silicon planar high-voltage transistor designed for general-purpose switching and amplification applications.