ProjectsPricingInsights

MMBT5551DW AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551DW product

MMBT5551DW

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-363High Voltage

The MMBT5551DW is a high-voltage NPN transistor in a compact SOT-363 package, suitable for medium-power switching and amplification.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • High-power applications exceeding 500mW
  • Circuits requiring voltages above 160V

Check before use

  • Thermal dissipation in the SOT-363 package

Key specifications

VCEO
160 V
IC
600 mA
Package
SOT-363

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Switching

Datasheet

84c00a95efb2e441a7848e70bea58e49_2302091130_Shikues-MMBT5551DW_C5344622.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551DW: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551DW is an NPN silicon epitaxial planar transistor designed for medium power amplification and switching applications, packaged in an ultra-small SOT-363 surface mount format.