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MMBT5551G-B-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551G-B-AE3-R product

MMBT5551G-B-AE3-R

Discrete Semiconductor Products

NPNHigh VoltageSOT-23

The MMBT5551G-B-AE3-R is a high-voltage NPN transistor designed for fast switching applications, featuring a 160V collector-emitter breakdown voltage and 600mA current capacity in a compact SOT-23 package.

Best for

  • High-voltage switching
  • General purpose amplification

Avoid if

  • Applications requiring >600mA current
  • High-power dissipation environments

Check before use

  • Gain rank (Rank B: 150-240)

Key specifications

VCEO
160V
IC
600mA
hFE
150-240

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingGeneral Purpose

Datasheet

af702610434a209d3940f68f76e1228d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551G-B-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, fast-switching NPN bipolar junction transistor (BJT) manufactured by UTC, commonly used in consumer and industrial switching circuits.