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MMBT5551LT1G-CN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551LT1G-CN product

MMBT5551LT1G-CN

Bipolar (BJT)

NPNSOT-23160 V600 mA300 mWhigh voltage

MMBT5551LT1G-CN is a ChipNobo SOT-23 NPN transistor for high-voltage switching or amplification, with a 160 V VCEO rating and 600 mA continuous collector-current rating.

Best for

  • High-voltage low-power switching
  • General-purpose NPN amplification
  • Compact SOT-23 designs

Avoid if

  • Applications exceeding 300 mW package dissipation
  • Designs requiring documented compliance or lifecycle status

Check before use

  • Collector-emitter voltage margin
  • Collector current and base-drive ratio
  • PCB thermal derating
  • SOT-23 pin assignment

Key specifications

Polarity / type
NPN bipolar transistor
Collector-emitter voltage
160 V VCEO
Continuous collector current
600 mA
Power dissipation
300 mW at 25 °C
Package
SOT-23, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General switching circuitsIndustrial low-power control stages

Datasheet

45c9f7e6452fc5e000d814ce1ed200e6_MMBT5551LT1G-CN.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551LT1G-CN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

MMBT5551LT1G-CN is a ChipNobo NPN bipolar transistor supplied in a 3-pin SOT-23 surface-mount package. The datasheet identifies pins 1, 2, and 3 as base, emitter, and collector respectively.