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MMBT5551LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551LT1G product

MMBT5551LT1G

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23AEC-Q101

The MMBT5551LT1G is a high-voltage NPN transistor in a SOT-23 package, ideal for general-purpose amplification and switching in space-constrained circuits.

Best for

  • High-voltage signal amplification
  • Switching applications
  • Automotive electronics

Avoid if

  • Applications requiring high power dissipation (>225mW)
  • Low-voltage, high-current power switching

Check before use

  • Thermal management
  • PCB creepage distances for 160V operation

Key specifications

VCEO
160 V
IC (Continuous)
600 mA
hFE
80 - 250
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

AutomotiveIndustrialGeneral Purpose

Datasheet

MMBT5550LT1-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN silicon transistor designed for general-purpose amplifier and switching applications, featuring a 160V collector-emitter breakdown voltage.