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MMBT5551S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551S product

MMBT5551S

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23

The MMBT5551S is a high-voltage NPN bipolar transistor in a SOT-23 package, suitable for general-purpose switching and amplification.

Best for

  • High-voltage switching
  • Signal amplification

Avoid if

  • Applications exceeding 160V
  • High-power dissipation circuits

Check before use

  • Thermal management
  • Voltage transients

Key specifications

VCEO
160 V
IC
600 mA
hFE
100-300

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

c7102e9a2a6502c9240aefe647b67f78_2405231505_FOSAN-MMBT5551S_C22395786.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN bipolar transistor manufactured by FOSAN, designed for applications requiring up to 160V collector-emitter voltage.