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MMBT5551W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT5551W product

MMBT5551W

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-323High Voltage

The MMBT5551W is a high-voltage NPN transistor in a SOT-323 package, suitable for medium-power switching and amplification.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • Applications requiring high power dissipation exceeding 200mW

Check before use

  • Thermal management in high-density layouts

Key specifications

VCEO
160 V
IC
600 mA
hFE
80-300

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Switching

Datasheet

b77fa131ce3274f81be22d40aea001ad_CBI(创基)&MMBT5551W.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT5551W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBT5551W is an NPN bipolar junction transistor (BJT) designed for medium-power amplification and switching tasks, packaged in a compact SOT-323 surface-mount format.