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MMBT6429LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT6429LT1G product

MMBT6429LT1G

Transistors - Bipolar (BJT) - Single

NPNAmplifierSOT-23

The MMBT6429LT1G is a high-gain NPN amplifier transistor in a SOT-23 package, suitable for low-noise signal amplification.

Best for

  • Low-noise signal amplification
  • General purpose switching

Avoid if

  • High-power applications exceeding 225mW dissipation

Check before use

  • Thermal derating requirements

Key specifications

VCEO
45 V
IC
200 mA
hFE
500 - 1250

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Purpose

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT6429LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon amplifier transistor designed for high-gain, low-noise applications, packaged in a surface-mount SOT-23.