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MMBT8050D(1.5A) -Y1-HAF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBT8050D(1.5A) -Y1-HAF product

MMBT8050D(1.5A) -Y1-HAF

Transistors - Bipolar (BJT) - Single

NPNTransistorSOT-23

The MMBT8050D is a general-purpose NPN silicon epitaxial planar transistor in a TO-236 (SOT-23) package, designed for switching and amplifier applications.

Best for

  • Switching circuits
  • Audio frequency driver stages

Avoid if

  • High-power applications exceeding 350mW

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
25 V
IC
1.5 A
hFE
160-400

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposeAudio

Datasheet

df7e3b20b93a4f3024910079274bd729_ST(先科)&MMBT8050D(1.5A) -Y1-HAF.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBT8050D(1.5A) -Y1-HAF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN transistor capable of handling up to 1.5A of collector current, commonly used in AF-driver stages.