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MMBTA13LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTA13LT1G product

MMBTA13LT1G

Transistors - Bipolar (BJT) - Single

NPNDarlingtonSOT-23

The MMBTA13LT1G is a high-gain NPN Darlington transistor in a SOT-23 package, suitable for low-power amplification tasks.

Best for

  • Signal amplification
  • Low-power Darlington applications

Avoid if

  • High-power switching
  • High-frequency applications above 125MHz

Check before use

  • Thermal dissipation on FR-5 board

Key specifications

VCES
30 V
IC
300 mA
hFE
5000 min

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Amplification

Datasheet

MOTOC001-7.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTA13LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Silicon Darlington amplifier transistor designed for high-gain, low-power signal amplification.