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MMBTA14-7-F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTA14-7-F product

MMBTA14-7-F

Transistors - Bipolar (BJT) - Single

NPNDarlingtonSOT23Transistor

The MMBTA14-7-F is a high-gain NPN Darlington transistor in a SOT23 package, suitable for medium-power switching and amplification.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • High-frequency applications (due to Darlington structure)
  • Very low-voltage signal paths

Check before use

  • Thermal dissipation limits
  • Base-emitter voltage drop

Key specifications

VCEO
30 V
IC
300 mA
hFE
10,000 - 20,000

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

General SwitchingAmplification

Datasheet

Diodes-Inc.-MMBTA14-7-F.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTA14-7-F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington transistor manufactured by Diodes Incorporated, optimized for high current gain.