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MMBTA14G-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTA14G-AE3-R product

MMBTA14G-AE3-R

Transistors - Bipolar (BJT) - Single

NPNDarlingtonSOT-23Transistor

The MMBTA14G-AE3-R is an NPN Darlington transistor from UTC, optimized for high-gain applications in a compact SOT-23 package.

Best for

  • High-gain amplification
  • Low-power switching

Avoid if

  • High-power applications exceeding 350mW
  • High-frequency switching

Check before use

  • Thermal dissipation requirements
  • Pin assignment

Key specifications

Type
NPN Darlington
VCES
30 V
hFE
20000
Package
SOT-23

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General amplification

Datasheet

b0317e5f301e838505ae85ab737edb35_1806090834_UTC-Unisonic-Tech-MMBTA14G-AE3-R_C171471.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTA14G-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington transistor manufactured by UTC, designed for high-gain switching and amplification.