ProjectsPricingInsights

MMBTH10LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTH10LT1G product

MMBTH10LT1G

Transistors - Bipolar (BJT) - RF

NPNRF TransistorVHF/UHFSOT-23

The MMBTH10LT1G is an NPN silicon VHF/UHF transistor optimized for high-frequency signal applications in a compact SOT-23 package.

Best for

  • VHF/UHF signal amplification
  • Automotive RF circuits

Avoid if

  • High-power switching applications exceeding 225mW

Check before use

  • Thermal derating requirements above 25°C

Key specifications

VCEO
25 V
fT
650 MHz
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

RF AmplificationAutomotive

Datasheet

MMBTH10LT1-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTH10LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMBTH10LT1G is an NPN silicon transistor designed for VHF/UHF frequency applications, featuring a 25V collector-emitter breakdown voltage and a 650MHz transition frequency.