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MMBTSC3356-3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTSC3356-3G product

MMBTSC3356-3G

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow Noise

The MMBTSC3356-3G is a specialized NPN RF transistor for low-noise amplification in VHF/UHF/CATV bands.

Best for

  • RF signal amplification
  • CATV equipment
  • VHF/UHF receivers

Avoid if

  • High-power switching applications
  • Low-frequency audio circuits

Check before use

  • Gain group selection (Q, R, or S)
  • Thermal management for 200mW dissipation

Key specifications

fT
3 GHz
Noise Figure
1.1 dB
VCEO
12 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

33d2238bb7e7f4e548bf0e47202c0373_2201121400_CBI-MMBTSC3356-3G_C2928246.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTSC3356-3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon epitaxial planar transistor designed for microwave low-noise amplifier applications in VHF, UHF, and CATV frequency bands.