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MMBTSC3356-7G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMBTSC3356-7G product

MMBTSC3356-7G

Transistors - Bipolar (BJT) - RF

NPNRF TransistorSOT-23

The MMBTSC3356-7G is a high-frequency NPN transistor designed for low-noise amplification in VHF, UHF, and CATV applications.

Best for

  • VHF/UHF signal amplification
  • CATV equipment

Avoid if

  • High-power switching applications
  • Low-frequency general-purpose logic

Check before use

  • Gain group selection (Q, R, S)

Key specifications

fT
7 GHz
Noise Figure
1.1 dB
VCEO
12 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

24c2dfebaaaa23e89b08b4ce94ee4146_2403071517_CBI-MMBTSC3356-7G_C21714194.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMBTSC3356-7G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon epitaxial planar transistor optimized for microwave low-noise amplifier applications.