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MMDT2222V-7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMDT2222V-7 product

MMDT2222V-7

Transistors - Bipolar (BJT) - Arrays

Dual NPNBJTSOT563AEC-Q101

The MMDT2222V-7 is a dual NPN small-signal transistor housed in an ultra-small SOT563 surface-mount package, designed for medium-power amplification and switching.

Best for

  • Medium power amplification
  • Switching applications
  • Space-constrained automotive or industrial designs

Avoid if

  • High-power applications exceeding 150mW dissipation

Check before use

  • Thermal dissipation limits
  • Pinout configuration

Key specifications

VCEO
40 V
IC
600 mA
Package
SOT563

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
EAR99
HTSUS
8541210095.0

Application

General SwitchingSignal Amplification

Datasheet

Diodes-Inc.-MMDT2222V-7.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMDT2222V-7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN bipolar junction transistor (BJT) from Diodes Incorporated, qualified to AEC-Q101 standards for high reliability.