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MMDT5401G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMDT5401G product

MMDT5401G

Transistors

Dual PNPBJTSOT-363

The MMDT5401G is a dual PNP transistor housed in a SOT-363 surface-mount package, designed for medium-power switching and amplification tasks.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • High-power applications exceeding 200mW dissipation

Check before use

  • Thermal dissipation requirements
  • Pinout configuration

Key specifications

Transistor Type
PNP
Vceo
150 V
Ic
200 mA

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingSignal Amplification

Datasheet

4879be81b6ab7c45c0e431e49b04397e_2309191750_LGE-MMDT5401G_C18164951.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMDT5401G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMDT5401G is a dual PNP bipolar junction transistor (BJT) manufactured by LGE, packaged in a compact SOT-363 format.