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MMDT5551-7-F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMDT5551-7-F product

MMDT5551-7-F

Transistors - Bipolar (BJT) - Arrays

Dual NPNHigh VoltageSOT363

The MMDT5551-7-F is a dual NPN high-voltage transistor in a compact SOT363 package, suitable for medium power amplification and switching.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • Applications requiring high power dissipation beyond 320mW

Check before use

  • PCB creepage and clearance distances for high voltage operation

Key specifications

VCEO
160 V
IC
200 mA
hFE
80 - 250
Package
SOT363

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
-
HTSUS
-

Application

GeneralPower

Datasheet

Diodes-Inc.-MMDT5551-7-F.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMDT5551-7-F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN high-voltage transistor designed for medium power amplification and switching, packaged in an ultra-small SOT363 surface-mount format.