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MMDT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMDT5551 product

MMDT5551

Transistors

NPNBJTSOT-363Transistor

The MMDT5551 is a 160V NPN Bipolar Junction Transistor (BJT) housed in an SOT-363 surface-mount package, suitable for medium power amplification and switching tasks.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • Applications requiring high-current switching (>200mA)
  • High-power dissipation environments exceeding 200mW

Check before use

  • Thermal derating at high ambient temperatures
  • Saturation voltage requirements for specific switching loads

Key specifications

Type
NPN
VCEO
160 V
IC
200 mA
Package
SOT-363

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingSignal Amplification

Datasheet

61c2c47e9f1b08084e42600c25ca2207_MSKSEMI(美森科)&MMDT5551.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMDT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMDT5551 is an NPN epitaxial planar transistor designed for medium power amplification and switching applications.