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MMDT5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MMDT5551 product

MMDT5551

Transistors - Bipolar (BJT) - Arrays

Dual TransistorNPN/PNPSOT-363

The MMDT5551 is a dual NPN/PNP transistor in an SOT-363 package, suitable for medium power switching and amplification.

Best for

  • Medium power amplification
  • Switching circuits

Avoid if

  • High-power applications exceeding 0.2W dissipation

Check before use

  • Thermal dissipation limits
  • Pinout configuration

Key specifications

VCEO
160 V
IC
0.2 A
Package
SOT-363

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose Switching

Datasheet

61c2c47e9f1b08084e42600c25ca2207_MSKSEMI(美森科)&MMDT5551.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MMDT5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MMDT5551 is a dual transistor (NPN/PNP) manufactured by LGE, designed for medium power amplification and switching applications in a compact SOT-363 surface-mount package.