MS10N10 Datasheet, Specs, Alternatives & ECAD | MSKSEMI | PartGenie

AI summary

MS10N10 product

The MS10N10 is a 100V, 12A N-Channel MOSFET utilizing trench DMOS technology, optimized for high-efficiency switching applications like load switches and LED drivers.

Best for

Load switching
LED drivers
General power management

Avoid if

Applications requiring extremely low RDS(on) below 100mΩ

Check before use

Thermal design for high-current operation

Key specifications

VDS: 100 V
ID: 12 A
RDS(on): 115 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

PowerIndustrial

Datasheet

eb5b0226aec466fb50baf2aec9657278_2306121443_MSKSEMI-MS10N10_C7379963.pdf

800 KB

CAD Models

Download ECAD models for MS10N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MS10N10 is an N-Channel enhancement mode power MOSFET from MSKSEMI, built with trench DMOS technology for superior switching performance.