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MS18N100HGC0 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MS18N100HGC0 product

MS18N100HGC0

MOSFETs - Single

MOSFETN-Channel1000VPower

The MS18N100HGC0 is a high-voltage 1000V, 18A N-Channel Planar MOSFET from MASPOWER, housed in a TO-247 package, designed for high-efficiency power conversion applications.

Best for

  • Switch mode power supplies
  • LED power drivers
  • Half-bridge lamp ballasts

Avoid if

  • Applications requiring low-voltage logic level gate drive
  • Space-constrained designs where TO-247 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
1000 V
Continuous Drain Current
18 A
On-Resistance
0.55 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesLED Lighting

Datasheet

62d8cf55fb64865a68becb5c622f1476_2208230930_MASPOWER-MS18N100HGC0_C5139250.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MS18N100HGC0: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-Channel power MOSFET featuring a 1000V drain-source breakdown voltage and 18A continuous drain current capability, optimized for industrial power applications.