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MS3N100HGD0 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MS3N100HGD0 product

MS3N100HGD0

MOSFETs - Single

MOSFETN-Channel1000V

The MS3N100HGD0 is a 1000V N-Channel MOSFET in a TO-252 package, designed for high-voltage switching applications.

Best for

  • Power switching
  • Industrial power supplies

Avoid if

  • Low voltage applications where lower Rds(on) is required

Check before use

  • Thermal design
  • Gate drive circuit

Key specifications

Vdss
1000 V
Id
3 A
Rds(on)
6.0 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Switching

Datasheet

d9aa459cb833a8a715b823eea6128bdf_2301121030_MASPOWER-MS3N100HGD0_C5353709.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MS3N100HGD0: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel power MOSFET with a 1000V drain-source breakdown voltage and 3A continuous drain current capability.