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MT3S111TU,LF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MT3S111TU,LF product

MT3S111TU,LF

Component

RF TransistorSiGeNPNLow Noise

The MT3S111TU is a high-performance SiGe NPN RF transistor optimized for low-noise amplification in VHF/UHF applications.

Best for

  • VHF/UHF RF amplifiers
  • Low-noise front-end applications

Avoid if

  • High-power switching applications
  • Environments without ESD protection

Check before use

  • Thermal management on the ceramic board
  • ESD handling protocols

Key specifications

Transition Frequency
10 GHz
Noise Figure
0.85 dB
Gain
12.5 dB

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

RF Amplification

Datasheet

bc4a4b19875cd2d9ba9795cd27a7800b_2209291730_TOSHIBA-MT3S111TU-LF-T_C5174755.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MT3S111TU,LF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon-Germanium (SiGe) NPN epitaxial planar transistor from Toshiba, specifically designed for low-noise and low-distortion RF amplification in VHF and UHF frequency bands.