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MUN5316DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MUN5316DW1T1G product

MUN5316DW1T1G

Pre-Biased

BRTPre-biasedComplementarySOT-363

The MUN5316DW1T1G is a dual pre-biased transistor (BRT) array containing one NPN and one PNP transistor, ideal for space-constrained switching applications.

Best for

  • Digital switching
  • Interface circuits
  • Space-constrained PCB designs

Avoid if

  • High-power applications exceeding 100mA
  • Circuits requiring specific R2 bias values

Check before use

  • Thermal dissipation limits
  • Input voltage thresholds

Key specifications

Configuration
1 NPN, 1 PNP
VCEO
50 V
IC
100 mA
R1
4.7 kΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

General SwitchingAutomotive

Datasheet

DTC143TP-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MUN5316DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a complementary (NPN/PNP) Bias Resistor Transistor (BRT) array that integrates transistors with internal bias resistors, simplifying circuit design by eliminating external components.