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MVGSF1N02L-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MVGSF1N02L-HXY product

MVGSF1N02L-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-2320V

The MVGSF1N02L is a 20V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Low-voltage load switching

Avoid if

  • High-power applications exceeding 0.9W dissipation
  • High-voltage systems above 20V

Check before use

  • Thermal dissipation on PCB
  • Gate drive voltage compatibility

Key specifications

VDS
20 V
ID
2.3 A
RDS(ON)
60 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementGeneral Switching

Datasheet

b2de452855ad3e9432b13055761a697c_2403261654_HXY-MOSFET-MVGSF1N02L-HXY_C22366711.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MVGSF1N02L-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage applications, featuring trench technology for efficient switching.