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NCE01P03S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE01P03S product

NCE01P03S

MOSFETs - Single

P-ChannelMOSFET100VSOP-8

The NCE01P03S is a -100V, -3A P-Channel MOSFET in an SOP-8 package, optimized for power switching and DC/DC conversion using trench technology.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring >3A continuous current or high-speed switching beyond the specified gate charge limits.

Check before use

  • Thermal design on the PCB
  • Gate drive voltage levels

Key specifications

VDS
-100 V
ID
-3 A
RDS(on)
200 mΩ

Compliance & Environment

RoHS
Pb Free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Electronics

Datasheet

dbaee06034a83cc57106e263a6d33f00_2004201432_Wuxi-NCE-Power-Semiconductor-NCE01P03S_C502846.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE01P03S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET designed for high-density power applications.