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NCE01P18D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE01P18D product

NCE01P18D

MOSFETs - Single

MOSFETP-Channel100VPower Management

The NCE01P18D is a robust P-Channel MOSFET optimized for high-efficiency power switching in portable and battery-operated devices.

Best for

  • Battery management
  • Portable power systems
  • Notebook power rails

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where TO-263 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-100 V
ID
-18 A
RDS(on)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPortable Equipment

Datasheet

4965e3254a94f44df2c1b1a559bc98a2_2004201207_Wuxi-NCE-Power-Semiconductor-NCE01P18D_C502831.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE01P18D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET using advanced trench technology, rated for -100V and -18A.