NCE30D2519K Datasheet, Specs, Alternatives & ECAD | WUXI NCE POWER CO.,LTD. | PartGenie

AI summary

NCE30D2519K product

The NCE30D2519K is a complementary N and P-channel MOSFET pair in a TO-252-4L package, designed for high-efficiency switching applications like H-bridges.

Best for

H-bridge motor drivers
DC-AC inverters

Avoid if

Applications requiring extremely high power dissipation beyond 21W

Check before use

Gate drive voltage levels
Thermal dissipation requirements

Key specifications

VDS: 30V / -30V
ID: 25A / -19A
RDS(on): 12mΩ / 35mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

PowerIndustrial

Datasheet

582eec630418f7217432abcccfde8832_1809131526_Wuxi-NCE-Power-Semiconductor-NCE30D2519K_C216790.pdf

800 KB

CAD Models

Download ECAD models for NCE30D2519K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a complementary N-channel and P-channel power MOSFET pair integrated into a single TO-252-4L package, utilizing advanced trench technology.